Calculate the mobility of electrons (m² /V.sec) of n-type material having resistivity of 0.5 Q-m, the number of donor atoms per m is 3x1019 www 0.2467 0.4167 O 0.4267 0.4507
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- How many valence electrons are generally contained in materials used for insulators?We want to investigate how the field strength will be with air as dielectric and with steatite. A plate capacitor is placed in a 24 kV network between phase and ground. The relative permittivity of air is &=1 and for steatite &-6. The plate capacitor has area = 1m². The distance between the electrodes is 2 mm. Ep = 8.854-10-12 F/m A=1m² d=2mm a) Calculate the maximum field strength in the plate capacitor. (Answer: 9.8kV/mm) b) What is the capacitance of the capacitor if we use steatite? (Answer: C = 26.6nF)7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.
- 7. Each of three insulators forming a string has self-capacitance of “C" farad. The shunt capacitance of each o h cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency. [ 31-7%, 29-4%, 38-9%; 85-7%]Using the idea of energy bands in solid materials, explain the characteristics of the followingmaterialsa) conductorsb) insulatorsc) semiconductorsIdentify the statement from the following when the inductance can have high value. a. All the given options O b. If the number of turns of the wire is more O c. If the length of the wire is longer O d. If the cross-sectional area is less
- ÎNGİLİZCE TÜRKÇE RUSÇA An impurity like antimony (Sb) has five electrons in its outer shell. When there are Sb impurities in silicon,. Please choose one: ahiptir. a. A n-type material is created b. the crystal will be negatively charged C. none of the above D. both of the above 73:11 30.04.2021(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-sWhich of the following is not true for ferromagnetic materials? Please choose one: a. High?mthey have value. b.Above the Curie temperature, they lose their non-linear properties. C. a fixedµrthey have value. D.The energy loss is proportional to the area of the hysteresis loop.
- Please answer both question or give someone else to answer. Need small explanations. Which of the following are the majority carriers in p-type semiconductors? a. electrons b. photons c. holes d. neutrons Two capacitors C1 = 1.5 μF and C2 = 5 μF are in series. If the charge stored by C1 is 10 C, determine the charge stored by C2. a. 3 C b. 10 C c. 1.5 C d. 4 CPlease make a concept map of the covalent link theme for semiconductors with the following subtopics, you can add tables, graphs, images, or things you think are relevant 1.5 Driving process 1.5.0 Introduction 1.5.1 Mobility 1.5.2 Relationships between carrier equilibrium concentrations 1.5.3 Detailed balance principle 1.5.4 Carrier equilibrium concentrations in homogeneous semiconductors 1.5.5 Conductivity 1.5.6 Hall EffectElectrical Engineering An insulator has 3 units. The capacitance between each insulator pin and earth is 15% of self capacitance of each unit. Find: a. Voltage across each insulator unit in percentage. b. String efficiency.
